SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE - BSP31 - BSP41 BSP33 - BSP43 PARTMARKING DETAIL - Device type in full

文件：47.36 Kbytes 页数：1 Pages

Zetex

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications.

文件：43.88 Kbytes 页数：8 Pages

PHI

飞利浦

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：174.92 Kbytes 页数：2 Pages

Diotec

德欧泰克

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ NPN COMPLEMENTS ARE BSP40, BSP41, B

文件：73.15 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

PNP medium power transistors

FEATURES •High current (max. 1 A) •Low voltage (max. 80 V). APPLICATIONS •Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43.

文件：327 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：BSP316P；Package：SOT223；P-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.54164 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：BSP317P；Package：PG-SOT223；SIPMOS Small-Signal-Transistor

Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249221

文件：620.38 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：BSP318S；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92805 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

文件：174.92 Kbytes 页数：9 Pages

SIEMENS

西门子

Green device available.

Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RD

文件：725.7 Kbytes 页数：5 Pages

KERSEMI