N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：88.92 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. APPLICATIONS · Line current interruptor in telephone sets · Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package

文件：199.82 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel vertical D-MOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

N-channel enhancement mode vertical D-MOS transistor

恩XP

动圈喇叭

BELLSING

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