NPN high-voltage transistors

DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: BSP16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Switching and amplification • Especially used in telephony and automotive applications.

文件：42.9 Kbytes 页数：8 Pages

PHI

PHI

NPN high-voltage transistors

DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: BSP16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Switching and amplification • Especially used in telephony and automotive applications.

文件：101.55 Kbytes 页数：6 Pages

恩XP

NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •Switching and amplification •Especially used in telephony and automotive applications. DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: BSP16.

文件：274.76 Kbytes 页数：7 Pages

NEXPERIA

安世

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：65.25 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：65.25 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown

文件：65.6 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown

文件：65.25 Kbytes 页数：12 Pages

PHI

PHI

NPN Silicon Epitaxial Transistor

Features ● High Voltage: V(BR)CEO of 250 and 350 Volts. ● Available in 12 mm Tape and Reel

文件：40.4 Kbytes 页数：1 Pages

KEXIN

科信电子

SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

NPN Silicon Epitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Voltage: V(BR)CEO

文件：119.29 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：76.53 Kbytes 页数：12 Pages

PHI

PHI