P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown

文件：65.6 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION\nP-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES\n• Very low RDS(on)\n• Direct interface to C-MOS, TTL, etc.\n• High-speed switching\n• No secondary breakdown • Very low RDS(on)\n• Direct interface to C-MOS, TTL, etc.\n• High-speed switching\n• No secondary breakdown;

恩XP

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

文件：116.9 Kbytes 页数：3 Pages

MOSPEC

统懋

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

文件：118.81 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：222.06 Kbytes 页数：3 Pages

MOSPEC

统懋