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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BSP	文件：92.14 Kbytes Page：3 Pages	Precision Potentiometer	BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司	BITECH
BSP	文件：104.39 Kbytes Page：2 Pages	Space-saving Two-wire Signal Conditioners B-UNIT	MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司	MSYSTEM
BSP030	文件：109.33 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES •Highspeedswitching •Nosecondarybreakdown •Verylowon-stateresistance. APPLICATIONS •Motorandactuatordrivers •Powermanagement •Synchronizedrectification.	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP030	文件：1.01398 Mbytes Page：8 Pages	N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •AEC-Q101Qualifiedc •100RgandUISTested	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
BSP030	文件：449.05 Kbytes Page：14 Pages	N-channel enhancement mode field-effect transistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSP030inSOT223. 2.Features nTrenchMOS™technology nFastswitching nLowon-stateresistance nLogiclevelcompatible nSurfacemountpackage. 3	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BSP090	文件：124.07 Kbytes Page：12 Pages	P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES •Highspeedswitching •Nosecondarybreakdown •Verylowon-stateresistance. APPLICATIONS •Motorandactuatordrivers •Powermanagement •Synchronizedrectification.	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP100	文件：111.91 Kbytes Page：8 Pages	N-channel enhancement mode TrenchMOS transistor VDSS=30V ID=6A RDS(ON)≤100mΩ(VGS=10V) RDS(ON)≤200mΩ(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fasts	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP100	文件：208.19 Kbytes Page：9 Pages	N-channel enhancement mode TrenchMOSÔ transistor FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- •Motorandrel	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BSP106	文件：65.74 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES •VerylowRDS(on) •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown.	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP107	文件：65.61 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelope. Intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdriverswitching. FEATURES •DirectinterfacetoC-MOS,TTL,etc.due	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP108	文件：64.709 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP110	文件：75.69 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseintelephoneringercircuitsandforapplicationinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •No	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP110	文件：977.65 Kbytes Page：6 Pages	N-Channel 100-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
BSP110	文件：374.02 Kbytes Page：14 Pages	N-channel enhancement mode field-effect transistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSP110inSOT223. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSurfacemountpackage. 3.Applications nRela	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BSP120	文件：65.79 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP121	文件：75.46 Kbytes Page：12 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP122	文件：58.56 Kbytes Page：8 Pages	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223packageandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-spe	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BSP122	文件：1.03072 Mbytes Page：8 Pages	N-Channel 200 V (D-S) MOSFET FEATURES •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
BSP122	文件：174.83 Kbytes Page：9 Pages	N-channel enhancement mode vertical D-MOS transistor FEATURES ·DirectinterfacetoC-MOS,TTL, etc. ·High-speedswitching ·Nosecondarybreakdown. DESCRIPTION N-channelenhancementmode verticalD-MOStransistorina SOT223packageandintendedfor useasalinecurrentinterruptorin telephonesetsandforapplicationsin relay,high-	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BSP123	文件：160.74 Kbytes Page：9 Pages	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V	SIEMENSSiemens Ltd 西门子德国西门子股份公司	SIEMENS

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晶体管资料

型号：
BSP15
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-PNP
性质：
表面帖装型（SMD）_低频或音频放大（LF）_开关管
封装形式：
贴片封装
极限工作电压：
200V
最大电流允许值：
1A
最大工作频率：
>15MHZ
引脚数：
3
可代换的型号：
最大耗散功率：
1.5W
放大倍数：
图片代号：
H-99
vtest：
200
htest：
15000100
atest：
1
wtest：
1.5

详细参数

型号：
BSP
制造商：
TE Connectivity

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	BSP	INFINEON	23+	PG-SOT223-4	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	BSP	INFINEON	23+	PG-SOT223-4	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	BSP	INFINEON	23+	PG-SOT223-4	7000		询价
深圳市昌源伟业科技有限公司	BSP752R	INFINEON	2014+	SOP8	6240	现货原装库存热卖	询价
深圳市毅创腾电子科技有限公司	BSP75N	INFINEON		SOT-223	800	正品原装--自家现货-实单可谈	询价
深圳市卓越微芯电子有限公司	BSP603S2L	INFINEO	2020+	SOT-223	51000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华斯顿科技有限公司	BSP135	infineon	22+23+	SOT-223	44902	绝对原装正品全新进口深圳现货	询价
利广微科技（深圳)有限公司	BSP772T	INFINEON/英飞凌		标准封装	56242	一级代理原装正品现货期货均可订购	询价
深圳市勤思达科技有限公司	BSP62	NXP	23+	SOT223	7800	全新原装正品,现货销售	询价
深圳市富安睿科技有限公司	BSP762T	Infineon	21+	DSO-8	6000	现货库存!原装正品!	询价

更多BSP供应商更新时间2024-9-20 15:00:00

晶体管资料

详细参数

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