Precision Potentiometer

文件：92.14 Kbytes 页数：3 Pages

BITECH

Space-saving Two-wire Signal Conditioners B-UNIT

文件：104.39 Kbytes 页数：2 Pages

MSYSTEM

爱模

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features n TrenchMOS™ technology n Fast switching n Low on-state resistance n Logic level compatible n Surface mount package. 3

文件：449.05 Kbytes 页数：14 Pages

NEXPERIA

安世

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 Rg and UIS Tested

文件：1.01398 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification.

文件：109.33 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification.

文件：124.07 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode TrenchMOS transistor

VDSS = 30 V ID = 6 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast s

文件：111.91 Kbytes 页数：8 Pages

PHI

PHI

N-channel enhancement mode TrenchMOSÔ transistor

FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and rel

文件：208.19 Kbytes 页数：9 Pages

NEXPERIA

安世

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

文件：65.74 Kbytes 页数：12 Pages

PHI

PHI

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. FEATURES • Direct interface to C-MOS, TTL, etc. due

文件：65.61 Kbytes 页数：12 Pages

PHI

PHI