N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification.

文件：109.33 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 Rg and UIS Tested

文件：1.01398 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features n TrenchMOS™ technology n Fast switching n Low on-state resistance n Logic level compatible n Surface mount package. 3

文件：449.05 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世