P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown

文件：50 Kbytes 页数：8 Pages

PHI

PHI

P-Channel 60-V (D-S) MOSFET

FEATURES • High-Side Switching • Low On-Resistance: 8
• Low Threshold: −1.9 V • Fast Switching Speed: 16 ns • Low Input Capacitance: 15 pF BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Switching • Easily Driven Without Buffer AP

文件：62.88 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 60-V (D-S) MOSFET

Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical

文件：75.94 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features ● High Input Impedance ● Fast Switching Speed ● CMOS Logic Compatible Input ● No Thermal Runaway or Secondary Breakdown

文件：62.31 Kbytes 页数：2 Pages

DIODES

美台半导体

DMOS Transistors (P-Channel)

FEATURES ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

文件：239.4 Kbytes 页数：5 Pages

GE

DMOS Transistor (P-Channel)

文件：273.95 Kbytes 页数：5 Pages

GE

Enhancement-Mode MOSFET Transistors

Vishay

威世

BS250F

PARTMARKING DETAIL - MX

文件：86.15 Kbytes 页数：3 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL - SP

文件：80.5 Kbytes 页数：3 Pages

ZETEX

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

PARTMARKING DETAIL - MX

文件：86.15 Kbytes 页数：3 Pages

DIODES

美台半导体