SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR

FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BS2

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Zetex

丝印：BS2；Package：SOT89；PNP Darlington transistors

FEATURES •High current (max. 0.5 A) •Low voltage (max. 80 V) •Integrated diode and resistor. APPLICATIONS •Industrial switching applications such as: –Print hammer –Solenoid –Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BS

文件：329.14 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：BS2；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

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NEXPERIA

安世

丝印：BS2132F；Package：SOP28；600V High Voltage 3 Phase Bridge Driver Integrated Bootstrap Diode

文件：2.317 Mbytes 页数：33 Pages

ROHM

罗姆

Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package. low Power Supply Voltage: 3.3V, 2.5V，1.8V Conforms to AEC-Q200 Tight symmetry (45 to 55) available Tri-state enable/disable Typical Application ● WLAN/WiMax ● Mobile Phone ● - DSC,Set-top Box,HDTV Typical Application

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XTALTQ

恒晶科技

Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package. low Power Supply Voltage: 3.3V, 2.5V，1.8V Conforms to AEC-Q200 Tight symmetry (45 to 55) available Tri-state enable/disable Typical Application ● WLAN/WiMax ● Mobile Phone ● - DSC,Set-top Box,HDTV Typical Application

文件：231.14 Kbytes 页数：2 Pages

XTALTQ

恒晶科技

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

文件：64.34 Kbytes 页数：12 Pages

PHI

飞利浦

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Low Drain-Source On-Resistance • Specially Suited for Telephone Subsets

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DIODES

美台半导体

DMOS Transistors (P-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone su

文件：238.81 Kbytes 页数：5 Pages

GE

DMOS Transistors (P-Channel)

FEATURES ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

文件：37.98 Kbytes 页数：2 Pages

GE