DMOS Transistors (N-Channel)

FEATURES ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

文件：38.05 Kbytes 页数：2 Pages

GE

DMOS Transistors (N-Channel)

FEATURES\n♦ High input impedance\n♦ Low gate threshold voltage\n♦ Low drain-source ON resistance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown ♦ High input impedance\n♦ Low gate threshold voltage\n♦ Low drain-source ON resistance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown;

GE

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：160.74 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

文件：114.63 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Small-Signal-Transistor

文件：2.54348 Mbytes 页数：9 Pages

Infineon

英飞凌