BS100C

PHOTODIODE FOR VISIBLE LIGHT

BS100C

Package：侧视图；包装：散装 类别：传感器，变送器 光学传感器 - 光电二极管 描述：SENSOR PHOTODIODE 560NM SIDE

BS100C0F

Package：侧视图；类别：传感器，变送器 光学传感器 - 光电二极管 描述：SENSOR PHOTODIODE 560NM SIDE

BS100D

WideWavelengthBandTypePhotodiode

BSF-C100

BandStopFilter

BSF-C100+

BandStopFilter

BSP100

N-channelenhancementmodeTrenchMOStransistor

VDSS=30V ID=6A RDS(ON)≤100mΩ(VGS=10V) RDS(ON)≤200mΩ(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fasts

BSP100

N-channelenhancementmodeTrenchMOSÔtransistor

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- •Motorandrel

BSS100

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BSS100

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe