ESD851

ESD85136VBidirectionalESDProtectionDiodeinSOD-323

1Features •IEC61000-4-2ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –6.5A(8/20μs) –Clampingvoltage:71Vat6.5A(8/20μs) •IOCapacitance:4.3pF(typical) •DCbreakdownvoltage:37.8V(minimum) •Ultralowleakagecurrent:

ESD851

ESD851-Q136VAutomotiveBidirectionalESDProtectionDiodeinSOD-323

1Features •ISO10605(330pF,330Ω)ESDprotection: –±27kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –6.5A(8/20μs) –Clampingvoltage:71Vat6.5A(8/20μs) •IOCapacitance:4.3pF(typical) •Ultralowleakagecurrent:10nA(maximum) •ESDclamping

ESD851DYFR

ESD85136VBidirectionalESDProtectionDiodeinSOD-323

1Features •IEC61000-4-2ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –6.5A(8/20μs) –Clampingvoltage:71Vat6.5A(8/20μs) •IOCapacitance:4.3pF(typical) •DCbreakdownvoltage:37.8V(minimum) •Ultralowleakagecurrent:

EXB851

IGBT-DrivingHybridICs

FSF851D

5-PHASESTEPPINGSYSTEMS

FSF851S

5-PHASESTEPPINGSYSTEMS

FSF851S-XB

5-PHASESTEPPINGSYSTEMS

FSM851D

5-PHASESTEPPINGSYSTEMS

FSM851S

5-PHASESTEPPINGSYSTEMS

FX851

DC-DCConverterApplications

Features •CompositetypecomposedofalowON-resistancePchannelMOSFETforultrahigh-speedswitchingandlow-voltagedrivingandafast-recovery,lowforward-voltageSchottkybarrierdiode.Facilitateshigh-densitymounting. •TheFX851isformedwith2chips,onebeingequivalenttothe2SJ1