FBR606

FASTRECOVERY

FDB606

6AMPFASTRECOVERYBRIDGERECTIFIERS

FDC606P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’slowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–6A,–12V. RDS(ON)=26mΩ@VGS=–4.5V RDS(ON)=35mΩ@VGS=–2.5V RDS(ON)=53mΩ@VGS=–

FDC606P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

FDC606P

P-ChannelEnhancementModeMOSFET

Application BatteryPack PortableDevices

FDM606P

P-Channel1.8VLogicLevelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportable

FG606

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FGBU606

6.0AUITRASOFTRECOVERYBRIDGE

FR606

6.0AMPS.FASTRECOVERYRECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

FR606

FASTRECOVERYRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes)