BSS123

N-CHANNELPOWERMOSFET

FEATURE ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteand ControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

BSS123

N-channelTrenchMOStransistor

PHI

BSS123

NChannelMOSFET

NChannelMOSFET FEATURE ●SurfaceMountPackage ●HighDensityCellDesignforExtremelyLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable APPLICATION ●SmallServoMotorControls ●PowerMOSFETGateDrivers ●SwitchingApplication

BSS123

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS100V ●ID200mA ●RDS(ON)(atVGS=10V)

BSS123

N-ChannelEnhancementModeFieldEffectTramsistor

Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating

BSS123

N-ChannelMOSFET

Features ●VDS(V)=100V ●ID=0.17A(VGS=10V) ●RDS(ON)

BSS123

N-ChannelEnhancementModePowerMOSFET

FEATURE ●Pb-FreePackageisavailable.

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

BSS123

N-ChannelEnhancementModeMOSFET

BSS123

100VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@170mA