BRA2N60技术资料参数批发采购蓝箭电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BRA2N60	文件：709.85 Kbytes Page：6 Pages	N-CHANNEL MOSFET in a TO-262 Plastic Package 文件：709.85 Kbytes 页数：6 Pages	FOSHAN 蓝箭电子	FOSHAN
BRA2N60	文件：300 bytes Page：1 Pages	高压MOS＞200V	BlueRocket 蓝箭电子	BlueRocket
MTB2N60E	文件：271.17 Kbytes Page：10 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes 页数：10 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60E	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多BRA2N60供应商更新时间2026-4-18 14:15:00