RF AMPLIFIER MODEL

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APITECH

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 4.5A, RDS(ON) = 55mW @VGS = 10V. FEATURES RDS(ON) = 72mW @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

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CET-MOS

华瑞

ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE

FEATURES ● Ultra Thin Type: 2.5 mm (Max.) • Detection at closed distance from samples ● Flexible Lead Out (polymide film) • Easy system design with a flexible wiring • Low outguessing for high vacuum operation ● Light Weight APPLICATIONS ● SEM ● FIB System ● Mask Aligner ● Elec

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

RF AMPLIFIER MODEL

文件：71.07 Kbytes 页数：1 Pages

APITECH