BQ3055EVM

Evaluation Kit

INTRODUCTION ThiskitcontainseverythingneededforrapidprototypingwiththeSA310KR3-phasedriver.Withamultitude ofcircuitoptions,theEK76offersversatilitywhenincomestoconnectinginputs,measuringoutputs, andconditioningsignalstothespecificapplicationenvironment.High-

BQ3055EVM

包装：散装 功能：电池电量计 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL MODULE FOR BQ3055

BX3055

RFAMPLIFIERMODEL

CEA3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055

N-Channel60-V(D-S)MOSFET

CEA3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055L

N-Channel60-V(D-S)MOSFET

CED3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CET3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CET3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.