非集成预驱MCU

BPS

晶丰明源

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：434.89 Kbytes 页数：4 Pages

CET

华瑞

P-Channel 60 V (D-S) MOSFET

文件：1.59421 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -16A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：358.8 Kbytes 页数：4 Pages

CET

华瑞