BSR110ME

ThickFilm2512SurgeResistors

BSS110

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaTO-92variantpackage. FEATURES •Lowthresholdvoltage •DirectinterfacetoC-MOS,TTL,etc. •Highspeedswitching •Nosecondarybreakdown. APPLICATIONS •IntendedforuseasaLinecurrentinterruptorin telepho

BSS110

SIPMOSSmall-SignalTransistor(PchannelEnhancementmodeLogicLevel)

SIPMOS®Small-SignalTransistor •Pchannel •Enhancementmode •LogicLevel •VGS(th)=-0.8...-2.0V

BSS110

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisdesignedtominimizeon-stateresistance,provideruggedandreliableperformanceandfastswitching

BT110S

SurfaceMountGlassPassivatedBridgeRectifiers

BTS110

TEMPFET(NchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

BTS110

TEMPFET(N-channelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

BTS110

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

BUZ110S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BUZ110S

SIPMOS짰PowerTransistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature