BTS110

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

BTS110

TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

BTS110

TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)

BTS110A

包装：散装 类别：五金件，紧固件，配件 板垫片，支座 描述：HEX STANDOFF #6-32 BRASS 3/8\

BUZ110S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BUZ110S

SIPMOS짰PowerTransistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

BUZ110SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BV-SMAJ110A

TransientVoltageSuppressor

BV-SMAJ110CA

TransientVoltageSuppressor

BV-SMBJ110A

TransientVoltageSuppressor