isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.42 Kbytes 页数：2 Pages

ISC

无锡固电

TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

文件：320.67 Kbytes 页数：9 Pages

SIEMENS

西门子

TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)

文件：560.58 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel TEMPFET

Infineon

英飞凌

包装：散装 类别：五金件，紧固件，配件 板垫片，支座 描述：HEX STANDOFF #6-32 BRASS 3/8\

Essentra

益升华