650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated 5 V LDO ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼ Adjustable Gate Drive Strength ◼ Power Good Signal Output ◼ VDD UVLO Prot

文件：1.15736 Mbytes 页数：29 Pages

ROHM

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丝印：M3G107MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼ Nano CapTM Integrated 5 V LDO ◼ Wide Operating Range for VDD Pin Voltage ◼ Wide Operating Range for IN Pin Voltage ◼ Low VDD Quiescent and Operating Current ◼ Low Propagation Delay ◼ High dv/dt Immunity ◼ Adjustable Gate Drive Strength ◼ Power Good Signal Output ◼ VDD UVLO Prot

文件：1.15736 Mbytes 页数：29 Pages

ROHM

罗姆

Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM3G107MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650 V enhancement GaN HEMT and silico • Nano Cap™ Integrated 5 V LDO\n• Wide Operating Range for VDD Pin Voltage\n• Wide Operating Range for IN Pin Voltage\n• Low VDD Quiescent and Operating Current\n• Low Propagation Delay\n• High dv/dt Immunity\n• Adjustable Gate Drive Strength\n• Power Good Signal Output\n• VDD UVLO Protection\n• The;

ROHM

罗姆

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JST

JST集团

上传：深圳市云泰半导体科技有限公司二部

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JST

JST集团

上传：深圳市云泰半导体科技有限公司二部