丝印：BLU；Package：TDFN-83x3；Single 1.2A USB Switch in 3mm x 3mm TDFN

文件：298.02 Kbytes 页数：13 Pages

MAXIM

美信

丝印：BLU；Package：TDFN-83x3；Single 1.2A USB Switch in 3mm x 3mm TDFN

文件：298.02 Kbytes 页数：13 Pages

MAXIM

美信

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliabil

文件：234.11 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. FEATURES: • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold™ Metalization System

文件：17.57 Kbytes 页数：1 Pages

ASI

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliabil

文件：73.11 Kbytes 页数：10 Pages

PHI

PHI

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliabil

文件：234.11 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • multi-base st

文件：59.25 Kbytes 页数：10 Pages

PHI

PHI

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • multi-base st

文件：59.25 Kbytes 页数：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP