RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-

文件：1.40668 Mbytes 页数：15 Pages

Ampleon

安谱隆

Power LDMOS transistor

文件：502.32 Kbytes 页数：15 Pages

PHI

飞利浦

Power LDMOS transistor

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz. Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\nOptimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\nHigh power gain\nHigh efficiency\nInternal input matching for high gain and optimum broadband operation\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/E;

Ampleon

安谱隆

Package：SOT-539A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 21DB SOT539A

Ampleon USA Inc.