BLS9G3135L-400

LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz\n\n; • High efficiency\n• Excellent ruggedness\n• Designed for S-band operation\n• Excellent thermal stability\n• Easy power control\n• Integrated dual sided ESD protection enables excellent off-state isolation\n• High flexibility with respect to pulse formats\n• Internally matched for ease of use\n• Com;

BLS9G3135L-400

LDMOS S-band radar power transistor

Generaldescription 400WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 3.1GHzto3.5GHz. Featuresandbenefits Highefficiency Excellentruggedness DesignedforS-bandoperation Excellentthermalstability Easypowercontrol Integrateddua

BLS9G3135L-400U

Package：SOT-502A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS 32V SOT502A

BLUENRG-2

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QFN-32 QFN-48

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BLUENRG-248

ST
QFN-48

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