BLS9G3135L-400分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLS9G3135L-400属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLS9G3135L-400晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

400 W LDMOS power transistor for S-band radar applications in the frequency range from

3.1 GHz to 3.5 GHz.

Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for S-band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 S-band radar applications in the frequency range 3.1 GHz to 3.5 GHz