沟槽栅金属氧化物半导体场效应管(Trench MOSFETs)

BLQM10P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • High power and current handing capability\n• Lead free product is acquired \n• RoHS product\n• Surface mount package;

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上海贝岭

P-Channel Enhancement Mode Power MOSFET

Description The G10P03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：655.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Power MOSFET

文件：911.63 Kbytes 页数：5 Pages

MCC

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：272.14 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体