BLP5LA55S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz.

特性 Features

• High efficiency
• Integrated dual sided ESD protection
• Extreme ruggedness 65 : 1
• High power gain
• Excellent reliability
• Wideband
• High linearity
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• TETRA, SSB and LTE mobile radio applications in VHF and UHF bands
• Wideband radio application, frequency range from 5 MHz to 30 MHz and from 30 MHz to 512 MHz

简介

BLP5LA55S属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP5LA55S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。