BLP35M805数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

5 W LDMOS power transistor for broadcast, ISM and A&D applications at frequencies from HF to 3500 MHz. 

The BLP35M805 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

特性 Features

• High efficiency
• High power gain
• Excellent ruggedness
• Excellent thermal stability
• Integrated ESD protection
• Designed for broadband operation (HF to 3500 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Broadcast, ISM and A&D applications in the frequency range from HF to 3500 MHz

简介

BLP35M805属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP35M805晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。