BLP15H9S30G数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

特性 Features

• Designed for broadband operation
• High efficiency
• Integrated dual sided ESD protection
• Excellent ruggedness
• High power gain
• Excellent reliability
• Easy power control
• Excellent stability
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Broadcast transmitter applications
• Industrial, scientific and medical applications
• Applicable at frequencies from HF to 2 GHz

简介

BLP15H9S30G属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP15H9S30G晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。