BLP27M810数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

特性 Features

• High efficiency
• High power gain
• Excellent ruggedness
• Excellent thermal stability
• Integrated ESD protection
• Designed for broadband operation (HF to 2700 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Broadcast and Industrial, Scientific and Medical applications in the frequency range from HF to 2700 MHz

简介

BLP27M810属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP27M810晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。