BLM9D2327-26B数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

特性 Features

• Integrated input splitter
• Integrated output combiner
• High efficiency
• Designed for broadband operation (frequency 2300 MHz to 2700 MHz)
• Independent control of carrier and peaking bias
• Integrated ESD protection
• Source impedance 50 Ω; high power gain
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 2300 MHz to 2700 MHz frequency range

简介

BLM9D2327-26B属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLM9D2327-26B晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。