BLM8D1822S-50PBG数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

特性 Features

• Integrated input splitter
• Integrated output combiner
• High efficiency
• Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
• High section-to-section isolation enabling multiple combinations
• Integrated temperature compensated bias
• Independent control of carrier and peaking bias
• Integrated ESD protection
• Excellent thermal stability
• Source impedance 50 Ω; high power gain
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
• Dual section or single ended
• Quadrature combined
• Push-pull

简介

BLM8D1822S-50PBG属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLM8D1822S-50PBG晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。