BLF888AS中文资料UHF power LDMOS transistor数据手册恩XP规格书

描述 Description

General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.Features and benefits
 Excellent ruggedness (VSWR 40 : 1 through all phases)
 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction ofHazardous Substances (RoHS) Directive 2002/95/EC