首页 >BLF6G10L>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

BLF6G10L

260 W LDMOS power transistor for base station applications

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLF6G10L(S)-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10L-260PBM

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10L-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10L-40BRN

Power LDMOS transistor

Generaldescription 40WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1GHz. Featuresandbenefits ■Typical2-carrierW-CDMAperformanceatfrequenciesof791MHzand821MHz,asupplyvoltageof28VandanIDqof390mA: ◆Averageoutputpower=2.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10L-40BRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-135R

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-135RN

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-135RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-160RN

Power LDMOS transistor

Generaldescription 160WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features Typical2-carrierW-CDMAperformanceatfrequenciesof920MHzand960MHz,asupplyvoltageof32VandanIDqof1200mA: Averageoutputpower=32W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-160RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-200

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-200R

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-200RN

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-200RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10LS-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF6G10L-260PRN

260 W LDMOS power transistor for base station applications

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLF6G10L-260PRN_15

Power LDMOS transistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLF6G10L-40BRN_15

Power LDMOS transistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLF6G10LS-260PRN

260 W LDMOS power transistor for base station applications

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

详细参数

  • 型号:

    BLF6G10L

  • 功能描述:

    射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
NXP
1117+
SOT502B
10198
只有原装!只做原装!一片起卖!
询价
NXP
17+
SMD
6200
100%原装正品现货
询价
NXP
2017+
SMD
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NXP
2020+
SOT-123
51
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NXP
1436+
SOT502B
30000
绝对原装进口现货可开增值税发票
询价
PHILIPS
23+
高频管
1520
专营高频管模块,全新原装!
询价
NXP
23+
SMD
7635
全新原装优势
询价
NXP
2339+
N/A
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
原厂正品
23+
高频管
1000
原装正品,假一罚十
询价
NXP
2021+
SOT502B
4600
只做原装假一罚十
询价
更多BLF6G10L供应商 更新时间2024-5-15 16:12:00