UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the

文件：94.9 Kbytes 页数：12 Pages

PHI

飞利浦

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the

文件：90.27 Kbytes 页数：12 Pages

PHI

飞利浦

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provi

文件：123.21 Kbytes 页数：12 Pages

PHI

飞利浦

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid

文件：123.09 Kbytes 页数：12 Pages

PHI

飞利浦

HF / VHF power LDMOS transistor

General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Features ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: ◆ Average output power = 20 W ◆ Power gain = 27.5 dB

文件：105.03 Kbytes 页数：13 Pages

PHI

飞利浦

HF / VHF power LDMOS transistor

General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Features ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: ◆ Average output power = 20 W ◆ Power gain = 27.5 dB

文件：105.02 Kbytes 页数：13 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HF / VHF power LDMOS transistor

General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: Average output power = 20 W Power gain = 27.5 dB Efficiency

文件：1.13304 Mbytes 页数：14 Pages

Ampleon

安谱隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP