RF POWER MOSFET

DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 16 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system

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ASI

RF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range.FEATURES INCLUDE:\n• PG = 16 dB Typical at 175 MHz\n• 30:1 Load VSWR Capability\n• Omnigold™ metalization system

ASI Semiconductor

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

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NTE

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR245CT series is supplied in the surface mounting SOT223 package. FEATURES • Low f

文件：39.29 Kbytes 页数：5 Pages

PHI

PHI

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体