RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 :  Outp

文件：1.40029 Mbytes 页数：13 Pages

Ampleon

安谱隆

Power LDMOS transistor

文件：530.34 Kbytes 页数：13 Pages

PHI

飞利浦

Power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (10 MHz to 108 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Power LDMOS transistor

恩XP

恩智浦

Package：SOT-539A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 28.5DB SOT539A

Ampleon

安谱隆