BLF178P分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLF178P属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLF178P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications

in the HF to 110 MHz band.

Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

IDq of 40 mA, a tp of 100 μs with δ of 20 :

 Output power = 1200 W

 Power gain = 28.5 dB

 Efficiency = 75

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (10 MHz to 110 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Industrial, scientific and medical applications

 FM transmitter applications