HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

文件：121.73 Kbytes 页数：16 Pages

PHI

飞利浦

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability •

文件：321.28 Kbytes 页数：19 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HF/VHF power MOS transistor BLF177

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Lowintermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch.

文件：158.01 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

ASI Semiconductor

HF/VHF power MOS transistor

恩XP

Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM

NJS

HF/VHF power MOS transistor

文件：123.29 Kbytes 页数：20 Pages

JMNIC

锦美电子

HF/VHF power MOS transistor

文件：123.29 Kbytes 页数：20 Pages

JMNIC

锦美电子

Package：SOT-121B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET NCHA 125V 19DB SOT121B

Ampleon USA Inc.