BS-C312RD-B

SINGLEDIGITLEDDISPLAYS

SINGLEDIGITLEDDISPLAYS

BTA312

3QHi-ComTriac

BTM312

BluetoothModule

BUL312FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideR.B.S.O.A. ■HIGHVOLTAGECAP

BUL312FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL312FPismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhigh switchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructurewithplanaredge terminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBULseriesisd

BUL312FP

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=500V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

BUP312

IGBT

•Lowforwardvoltagedrop •Highswitchingspeed •Lowtailcurrent •Latch-upfree •Avalancherated

BUZ312

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

BUZ312

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

C312

MONOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE