UHF amplifier modules

DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power o

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PHI

PHI

UHF amplifier modules

DESCRIPTION\nThe BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.\nThe modules produce an output power of 1.2 • Single 4.8 V nominal supply voltage\n• 1.2 W output power\n• Easy control of output power by DC voltage\n• Very high efficiency (typ. 55%)\n• Silicon bipolar technology\n• Standby current less than 100 µA.;

恩XP

COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T

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MOTOROLA

摩托罗拉

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

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MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

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MOSPEC

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