BGS8M2UK数据手册恩XP中文资料规格书

描述 Description

The BGS8M2UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer-Level Chip-Scale Package (WLCSP). This product is only to be used in an overmolded module.

The BGS8M2UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8M2UK can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8M2UK requires only one external matching inductor.

The BGS8M2UK is optimized for 1805 MHz to 2200 MHz.

特性 Features

Operating frequency from 1805 MHz to 2200 MHz

Noise figure (NF) = 0.75 dB

Gain 15.4 dB

High input 1 dB compression point of -3.5 dBm

Bypass switch insertion loss of -1.9 dB

High in band IP3i of 2.5 dBm

Supply voltage 1.5 V to 3.1 V

Integrated supply decoupling capacitor

Optimized performance at a supply current of 5.8 mA

Bypass mode current consumption < 1 µA

Integrated temperature stabilized bias for easy design

Requires only one input matching inductor

Input and output AC coupled

ESD protection on all pins (HBM > 2 kV)

Integrated matching for the output

Available in a WLCSP 0.69 mm x 0.44 mm x 0.2 mm: SOT1445-1

180 GHz transit frequency - SiGe:C technology

Moisture sensitivity level of 1

应用 Application

面向LTE接收的LNA，适用于智能手机、功能手机、平板电脑和射频前端模块