BGS8M2中文资料SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE数据手册恩XP规格书

描述 Description

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch forLTE receiver applications, available in a small plastic 6-pin extremely thin leadlesspackage. The BGS8M2 requires one external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applications wheresensitivity improvement is required. The high linearity of these low noise devicesensures the required receive sensitivity independent of cellular transmit power level inFDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, theBGS8M2 can be switched off to operate in bypass mode at a 1 µA current, to lower powerconsumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.

特性 Features

Operating frequency from 1805 MHz to 2200 MHz
Noise figure = 0.85 dB
Gain 14.4 dB
High input 1 dB compression point of -3.5 dBm
Bypass switch insertion loss of 2.2 dB
High in band IP3i of 3.5 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.8 mA
Power-down mode current consumption < 1 µA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1

应用 Application

LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules