SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch forLTE receiver applications, available in a small plastic 6-pin extremely thin leadlesspackage. The BGS8M2 requires one external matching inductor.\nThe BGS8M2 delivers system-optimized gain for both primary a Operating frequency from 1805 MHz to 2200 MHz\nNoise figure = 0.85 dB\nGain 14.4 dB\nHigh input 1 dB compression point of -3.5 dBm\nBypass switch insertion loss of 2.2 dB\nHigh in band IP3i of 3.5 dBm\nSupply voltage 1.5 V to 3.1 V\nSelf-shielding package concept\nIntegrated supply decoupling capaci;

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SiGe:C low-noise amplifier MMIC with bypass switch for LTE

文件：305 Kbytes 页数：15 Pages

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SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

\nThe BGS8M2UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer-Level Chip-Scale Package (WLCSP). This product is only to be used in an overmolded module.\n\nThe BGS8M2UK delivers system-optimized gain for both primary and diversity applications w \n\nOperating frequency from 1805 MHz to 2200 MHz\n\nNoise figure (NF) = 0.75 dB\n\nGain 15.4 dB\n\nHigh input 1 dB compression point of -3.5 dBm\n\nBypass switch insertion loss of -1.9 dB\n\nHigh in band IP3i of 2.5 dBm\n\nSupply voltage 1.5 V to 3.1 V\n\nIntegrated supply decoupling capacitor\n\nO;

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Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes 页数：55 Pages

COOPER

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes 页数：55 Pages

COOPER

4V Drive NchPch MOSFET

Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter. Structure Silicon N-channel / P-channel MOSFET

文件：168.23 Kbytes 页数：4 Pages

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