BGS8H2UK中文资料SiGe:C low-noise amplifier MMIC with bypass switch for LTE数据手册恩XP规格书

描述 Description

The BGS8H2UK is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip Scale Package (WLCSP). This product is only used in an overmolded module.

The BGS8H2UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. To lower power consumption the receive signal strength is sufficient. The BGS8H2UK can be switched off to operate in bypass mode at a 1 μA current. The BGS8H2UK requires only one external matching inductor.

The BGS8H2UK is optimized for 2300 MHz to 2690 MHz.

特性 Features

Operating frequency from 2300 MHz to 2690 MHz

Noise figure (NF) = 0.95 dB

Gain 13 dB with single matching coil

Bypass switch insertion loss of -2.2 dB

High input 1 dB compression point of -1 dBm

High in band IP3i of 3.5 dBm

Supply voltage 1.5 V to 3.1 V

Integrated supply decoupling capacitor

Optimized performance at a supply current of 5.8 mA

Bypass mode current consumption < 1 μA

Integrated temperature stabilized bias for easy design

Requires only one input matching inductor

Input and output AC coupled

ESD protection on all pins (HBM > 2 kV)

Integrated matching for the output

Available in a WLCSP 0.69 mm x 0.44 mm x 0.29 mm: SOT1445-1

180 GHz transit frequency - SiGe:C technology


Moisture sensitivity level 1

应用 Application

LNA for LTE reception in smart phones

Feature phones

Tablet PCs

RF front-end modules