BFY193P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:

BFY193PZZZA1

Package：MICRO-X1；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 7.5GHZ MICRO X1

BFY193S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:

BH193

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

BLV193

UHFpowertransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorintendedforcommonemitterclass-Aandclass-ABoperationinthe900MHzcommunicationsband. ThetransistorhasaSOT171flangeenvelopewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES •Emitterballastingresist

CDST193-G

SMDSwitchingDiode

Features -Lowforwardvoltage:VF=0.9V(Typ.) -Fastreverserecoverytime:trr=1.6nS(Typ.)

CDST193-G

SMDSwitchingDiode

CM193

WedgeBase

CMF193

BandpassFilter

DS193

Fashionretaillightingthatmakesanimpact,highlightingrichcolorsandincreasingcontrast