HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

文件：394.35 Kbytes 页数：5 Pages

Infineon

英飞凌

Package：MICRO-X1；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 7.5GHZ MICRO X1

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

文件：394.35 Kbytes 页数：5 Pages

Infineon

英飞凌

BATTERY HOLDERS & SNAPS AA, AAA, C, D & COIN CELL

文件：126.61 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resist

文件：108.63 Kbytes 页数：14 Pages

PHI

飞利浦