HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • fT = 7.2 GHz, F = 2.5 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

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SIEMENS

西门子

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Infineon

英飞凌

Silicon epitaxial planar type variable resistor

Silicon epitaxial planar type For reduced voltage and temperature compensation ■Features •Extremely small reverse current IR •High reliability with planar structure •Wide forward voltage VFrange

文件：43.29 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon Complementary Trasistors Audio Power Amplifier

Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: • High Power Dissipation: PC = 100W • Collector–Emitter Breakdown Voltage: V(BR)C

文件：22.31 Kbytes 页数：2 Pages

NTE

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

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PANJIT

強茂