BFU768F数据手册恩XP中文资料规格书

描述 Description

NPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.

特性 Features

• Low noise high linearity RF transistor
• 110 GHz fT silicon germanium technology
• Optimal linearity for low current and high gain
• Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
• Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM bandand 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
• Low current: 10.8 mA
• Noise figure < 1.2 dB
• Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
• High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
• Very fast on/off times
• Unconditionally stable
• Higher IP3, higher gain or lower noise figure possible with different application circuits

应用 Application

高线性度应用
中等输出功率应用
Wi-Fi / WLAN / WiMAX
ZigBee