NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package

文件：80.92 Kbytes 页数：11 Pages

PHI

飞利浦

NPN宽带硅锗RF晶体管

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Low noise high gain microwave transistor\nNoise figure (NF) = 0.7 dB at 5.8 GHz\nHigh maximum stable gain 27 dB at 1.8 GHz\n110 GHz fT silicon germanium technology;

恩XP

三极管

Nexperia

安世