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BFU725F

NPN wideband silicon germanium RF transistor

General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features ■ Low noise high gain microwave transistor ■ Noise figure (NF) = 0.7 dB at 5.8 GHz ■ High maximum stable gain 27 dB at 1.8 GHz ■ 11

文件:80.92 Kbytes 页数:11 Pages

恩XP

恩XP

BFU725F

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BFU725F

NPN wideband silicon germanium RF transistor

文件:148.07 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

BFU725F/N1

NPN wideband silicon germanium RF transistor

General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features ■ Low noise high gain microwave transistor ■ Noise figure (NF) = 0.7 dB at 5.8 GHz ■ High maximum stable gain 27 dB at 1.8 GHz ■ 11

文件:80.92 Kbytes 页数:11 Pages

恩XP

恩XP

BFU725F-N1

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BFU725FSLASHN1

NPN wideband silicon germanium RF transistor

General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features ■ Low noise high gain microwave transistor ■ Noise figure (NF) = 0.7 dB at 5.8 GHz ■ High maximum stable gain 27 dB at 1.8 GHz ■ 11

文件:80.92 Kbytes 页数:11 Pages

恩XP

恩XP

BFU725F_11

NPN wideband silicon germanium RF transistor

文件:148.07 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

BFU725F_N1_15

NPN wideband silicon germanium RF transistor

文件:148.07 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

BFU725F-N1

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package

文件:80.92 Kbytes 页数:11 Pages

PHI

飞利浦

PHI

BFU725F-N1

NPN wideband silicon germanium RF transistor

文件:148.07 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

技术参数

  • 集电极电流Ic:

    40mA

  • 集射极击穿电压Vce:

    2.8V

  • 晶体管类型:

    NPN

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
7080
全新原装正品/价格优惠/质量保障
询价
恩XP
25+
SOT-343
20300
NXP/恩智浦原装特价BFU725F即刻询购立享优惠#长期有货
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
恩XP
2025+
SOT-343
5000
原装进口价格优 请找坤融电子!
询价
恩XP
1215+
SOT-343
150000
全新原装,绝对正品,公司大量现货供应.
询价
恩XP
16+
NA
8800
诚信经营
询价
恩XP
24+
SOT-343SOT-323-4
30200
新进库存/原装
询价
恩XP
25+
SMD
2789
全新原装自家现货!价格优势!
询价
恩XP
19+
SOT-343
8650
原装正品,现货热卖
询价
更多BFU725F供应商 更新时间2025-12-24 23:00:00