BFU725F中文资料恩XP数据手册PDF规格书

General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

特性 Features

■ Low noise high gain microwave transistor

■ Noise figure (NF) = 0.7 dB at 5.8 GHz

■ High maximum stable gain 27 dB at 1.8 GHz

■ 110 GHz fT silicon germanium technology

Applications

■ 2nd LNA stage and mixer stage in DBS LNB’s

■ Satellite radio

■ Low noise amplifiers for microwave communications systems

■ WLAN and CDMA applications

■ Analog/digital cordless applications

■ Ka band oscillators (DRO’s)